Abstract
In this work, the electrical and optical performance of AlGaN-based ultraviolet-C light-emitting diodes (UVC-LEDs) with a tapered Al-content hole injection layer was investigated both theoretically and experimentally. A total of 1000 h of real-time electrical stress was conducted to study the degradation process of such devices. UVC-LED incorporating a hole injection layer with a larger gradient was found to significantly suppress the degradation process compared to a sample with a smaller tapering gradient. Marginal efficiency droop of only 4.55% as well as 66% improved light output power, were identified for the proposed design under a current density of approximately 100 A/cm(2). It was unambiguously demonstrated that UVC-LED with a greatly tapered hole injection layer facilitates both electron blocking and hole injection, providing a promising pathway towards the development of high-efficiency UV emitters.