Abstract
To enhance the electrical safe operation area (eSOA) of laterally diffused metal oxide semiconductor (LDMOS) transistors, a novel reduced surface electric field (Resurf) structure in the n-drift region is proposed, which was fabricated by ion implantation at the surface of the LDMOS drift region and by drift region dimension optimization. Technology computer-aided design (TCAD) simulations show that the optimal value of Resurf ion implantation dose 1 × 10(12) cm(-2) can reduce the surface electric field in the n-drift region effectively, thereby improving the ON-state breakdown voltage of the device (BV(on)). In addition, the extended n-drift region length of the L(d) design also improves device BV(on) significantly, and is aimed at reducing the current density and the electric field, and eventually suppressing the n-drift region impact ionization. The results show that the novel 60 V nLDMOS has a competitive BV(on) performance of 106.9 V, which is about 20% higher than that of the conventional one. Meanwhile, the OFF-state breakdown voltage of the device (BV(off)) of 88.4 V and the specific ON-resistance (R(ON,sp)) of 129.7 mΩ⋅mm(2) exhibit only a slight sacrifice.