Abstract
Ultra-Low-Power Non-Volatile Memory (UltraRAM), as a promising storage device, has attracted wide research attention from the scientific community. Non-volatile data retention in combination with switching at ≤2.6 V is achieved through the use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. Along these lines, in this work, the structure, storage mechanism, and improvement strategies of UltraRAM were systematically investigated to enhance storage window clarity and speed performance. First, the basic structure and working principle of UltraRAM were introduced, and its comparative advantages over traditional memory devices were highlighted. Furthermore, through the validation of the band structure and storage mechanism, the superior performance of UltraRAM, including its low operating voltage and excellent non-volatility, was further demonstrated. To address the issue of the small storage window, an improvement strategy was proposed by reducing the thickness of the channel layer to increase the storage window. The feasibility of this strategy was validated by performing a series of simulation-based experiments. From our analysis, a significant 80% increase in the storage window after thinning the channel layer was demonstrated, providing an important foundation for enhancing the performance of UltraRAM. Additionally, the data storage capability of this strategy was examined under the application of short pulse widths, and a data storage operation with a 10 ns pulse width was successfully achieved. In conclusion, valuable insights into the application of UltraRAM in the field of non-volatile storage were provided. Our work paves the way for further optimizing the memory performance and expanding the functionalities of UltraRAM.