Abstract
In this work, we present a radio frequency (RF) assessment of the nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device were compared with GaN-FinFET and conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains significantly improved in terms of Gma, Gms, Stern stability factor (SS), GMT, and intrinsic delay in comparison with conventional FinFET. Current gain and unilateral power gain were also evaluated for the extraction of fT (cut-off frequency) and f(MAX), respectively. f(T) and f(MAX) were enhanced by 88.8% and 94.6%, respectively. This analysis was performed at several THz frequencies. Further, the parametric assessment was also performed in terms of gate length and oxide thickness to find the optimized value of gate length and oxide thickness. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.