Abstract
We investigate the inorganic/organic hybrid vertical phototransistor (VPT) by integrating an atomic layer deposition-processed ZnO (ALD-ZnO) transistor with a prototype poly(3-hexylthiophene):[6,6]-phenyl-C(61)-butyric acid methyl ester (P3HT:PC(61)BM) blend organic photodiode (OPD) based on an encapsulated source electrode geometry, and discuss the device mechanism. Our preliminary studies on reference P3HT:PC(61)BM OPDs show non-ohmic electron injection between the ALD-ZnO and P3HT:PC(61)BM layers. However, the ALD-ZnO layer enables the accumulation of photogenerated holes under negative bias, which facilitates electron injection upon illumination and thereby enhances the external quantum efficiency (EQE). This mechanism underpins the photoresponse in the VPT. Furthermore, we demonstrate that the gate field in the VPT effectively modulates electron injection from the ALD-ZnO layer to the top OPD, resulting in the VPT operating as a non-ohmic OPD in the OFF state and as an ohmic OPD in the ON state. Benefiting from the unique transistor geometry and gate modulation capability, this hybrid VPT can achieve an EQE of 45,917%, a responsivity of 197 A/W, and a specific detectivity of 3.4 × 10(12) Jones under 532 nm illumination and low drain-source voltage (V(ds) = 3 V) conditions. This transistor geometry also facilitates integration with various OPDs and the miniaturization of the ZnO channel area, offering an ideal basis for the development of highly efficient VPTs and high-resolution image sensors.