Abstract
A bonding process was developed for glass-to-glass fusion bonding using Borofloat 33 wafers, resulting in high bonding yield and high flexural strength. The Borofloat 33 wafers went through a two-step process with a pre-bond and high-temperature bond in a furnace. The pre-bond process included surface activation bonding using O(2) plasma and N(2) microwave (MW) radical activation, where the glass wafers were brought into contact in a vacuum environment in an EVG 501 Wafer Bonder. The optimal hold time in the EVG 501 Wafer bonder was investigated and concluded to be a 3 h hold time. The bonding parameters in the furnace were investigated for hold time, applied force, and high bonding temperature. It was concluded that the optimal parameters for glass-to-glass Borofloat 33 wafer bonding were at 550 °C with a hold time of 1 h with 550 N of applied force.