Abstract
This work investigates the impact of reset pulse width on multilevel conductance programming in Al(2)O(3)/TiO(x)-based resistive random access memory. A 32 × 32 cross-point array of Ti (12 nm)/Pt (62 nm)/Al(2)O(3) (3 nm)/TiO(x) (32 nm)/Ti (14 nm)/Pt (60 nm) devices (2.5 µm × 2.5 µm active area) was fabricated via e-beam evaporation, atomic layer deposition, and reactive sputtering. Following an initial forming step and a stabilization phase of five DC reset-set cycles, devices were programmed using an incremental step pulse programming (ISPP) scheme. Reset pulses of fixed amplitude were applied with widths of 100 µs, 10 µs, 1 µs, and 100 ns, and the programming sequence was terminated when the read current at 0.2 V exceeded a 45 µA target. At a 100 µs reset pulse width, most cycles exhibited abrupt current jumps that exceeded the target current, whereas at a 100 ns width, the programmed current increased gradually in all cycles, enabling precise conductance tuning. Cycle-to-cycle variation decreased by more than 50% as the reset pulse width was reduced, indicating more uniform filament disruption and regrowth. These findings demonstrate that controlling reset pulse width offers a straightforward route to reliable, linear multilevel operation in Al(2)O(3)/TiO(x)-based RRAM.