Abstract
A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article. The simulation results show that the proposed MOSFET has good static performance and a longer short-circuit withstand time (t(sc)). The super-junction structure enables the device to possess an excellent compromise of breakdown voltage (BV) and specific on-resistance (R(on,sp)). Under short-circuit conditions, the depletion of p-pillar, p-shield, and floating p regions can effectively reduce saturation current and improve short-circuit capability. The proposed device has minimum gate-drain charge (Q(gd)) and gate-drain capacitance (C(gd)) compared with other devices. Moreover, the formation of floating p regions will not lead to an increase in process complexity. Therefore, the proposed MOSFET can maintain good dynamic and static performance and short-circuit ability together without increasing the difficulty of the process.