Abstract
This paper presents a dual-band power amplifier (PA) using a meandered line bandstop filter (BSF). An important challenge addressed in this design is to achieve proper isolation between the operational bands of the amplifier. The proposed BSF provides isolation and efficiency, effectively separating the output power and power gain between the two operational bands. Additionally, a dual-mode bias circuit is designed to serve as an inductor choke and control the second harmonics for both operating frequencies simultaneously. Two dual-band PAs, utilizing LDMOS and GaN HEMT transistors, have been designed using the proposed output matching circuit, which incorporates the BSF, bias circuit, and compensation circuit. The results obtained from both PAs, employing different transistors, are identical. Based on the presented concepts, a dual-band PA with an LDMOS transistor has been fabricated and measured. The measurements reveal an efficiency of 79.23%, an output power of 39.85 dBm, and a power gain of 14.85 dB at a frequency of 0.7 GHz. Similarly, at a frequency of 1.9 GHz, the efficiency is 77.24%, the output power is 38.22 dBm, and the power gain is 13.22 dB.