Abstract
The rapid evolution of power electronics has triggered an intensified focus on thermal management within electronics circuits, stemming from the critical necessity to mitigate thermal-related failure rates. Thermal management in power electronics circuits relies heavily on efficient heat transfer to prevent overheating of components and ensure their reliable operation, optimal performance, and safety. To facilitate the effective heat transfer, a thermal interface material (TIM) is utilized between switching components such as MOSFETs and heat sinks to improve surface contact, which increases heat transfer. In this research work, a novel thermal interface material (TIM) based on Tungsten-Gallium is introduced and evaluated to enhance thermal properties such as thermal conductivity and viscosity of Gallium-based TIM material with the addition of Tungsten microparticles. The study involves the examination of three distinct TIM samples with varying Tungsten content. Their surface morphology, composition, and topography were analyzed through techniques such as Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) within the context of a DC-DC boost converter. The results indicate that the addition of Tungsten significantly enhances TIM's viscosity and fluidity, even at high temperatures reaching up to 308 °C, which is crucial for power electronics circuits. In addition, thermal constant analyzer, and DC-DC converter circuit such as boost converter circuit were utilized for thermal and electrical characterization, respectively. These characterization results demonstrate that 10%/wt. addition of Tungsten can increase the thermal conductivity of Gallium from 13.1 to 22.82 W/m.K at room temperature, which represents an overall 74.2% increase in thermal conductivity. Furthermore, when the proposed TIM sample 2 was used in a boost converter circuit, the switching frequency of MOSFET IRF3808 was increased up to 20 kHz while the conduction losses were also lowest compared to other TIM samples.