Abstract
Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (i LP ) measurement has been used to extract depth-resolved L c profiles, where L c is the minority carrier collection length by diffusion. The extracted L c depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se2 (CIGS) thin film solar cells (Chung, 2019). During the measurement of i LP , the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the i LP values to properly estimate the electrical quality of CIGS thin films.