Buried Interface Regulation with TbCl(3) for Highly-Efficient All-Inorganic Perovskite/Silicon Tandem Solar Cells

利用TbCl(3)进行埋入式界面调控,实现高效全无机钙钛矿/硅串联太阳能电池

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Abstract

All-inorganic perovskite materials exhibit exceptional thermal stability and promising candidates for tandem devices, while their application is still in the initial stage. Here, a metal halide doping strategy was implemented to enhance device performance and stability for inverted CsPbI(3) perovskite solar cells (PSCs), which are ideal for integration into perovskite/silicon tandem solar cells. The lanthanide compound terbium chloride (TbCl(3)) was employed to improve buried interface between [4-(3,6-Dimethyl-9H-carbazol-9-yl) butyl] phosphonic acid (Me-4PACz) and perovskite layer, thereby enhancing the crystallinity of CsPbI(3) films and passivating non-radiative recombination defects. Thus, the inverted CsPbI(3) PSCs achieved an efficiency of 18.68% and demonstrated excellent stability against water and oxygen. Meanwhile, remarkable efficiencies of 29.40% and 25.44% were, respectively, achieved in four-terminal (4T) and two-terminal (2T) perovskite/silicon mechanically tandem devices, which are higher efficiencies among reported all-inorganic perovskite-based tandem solar cells. This study presents a novel approach for fabricating highly efficient and stable inverted all-inorganic PSCs and perovskite/silicon tandem solar cells.

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