Abstract
Room-temperature (RT) gas sensors for nitrogen dioxide (NO(2)) detection face persistent challenges, including reliance on high operating temperatures and inefficient charge carrier utilization under UV activation. To address these limitations, we engineered a p-n nano-heterojunction (NHJ) gas sensor by integrating p-type nickel oxide (NiO) nanoparticles onto n-type zinc oxide (ZnO) nanorods. This architecture leverages UV-driven carrier generation and interfacial electric fields at the NHJ to suppress recombination, enabling unprecedented RT performance. By optimizing thermal annealing conditions, we achieved a well-defined heterojunction with uniform NiO distribution on the top of the ZnO nanorods, validated through electron microscopy and X-ray photoelectron spectroscopy. The resulting sensor exhibits a 5.4-fold higher normalized response to 50 ppm NO(2) under 365 nm UV illumination compared to pristine ZnO, alongside rapid recovery and stable cyclability. The synergistic combination of UV-assisted carrier generation and heterojunction-driven interfacial modulation offers a promising direction for next-generation RT gas sensors aimed at environmental monitoring.