Abstract
The high-concentration N doping of diamond film is still a challenge since nitrogen is limited during diamond growth. In this work, a novel method combined with the thermal decomposition of silicon nitride was proposed to form the activated N and Si components in the reactor gas that surrounded the substrate, with which the high-concentration N and Si doping of diamond film was performed. Meanwhile, graphene oxide (GO) particles were also employed as an adsorbent to further increase the concentration of the N element in diamond film by capturing the more decomposed N components. All the as-deposited diamond films were characterized by scanning electron microscopy, energy dispersive spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. For the pure diamond film with a growth time of 0.5 h, the N and Si concentrations were 20.78 and 41.21 at%, respectively. For the GO-diamond film, they reached 47.47 and 21.66 at%, which set a new record for super high-concentration N doping of diamond film. Hence, thermal decomposition for the substrate can be regarded as a potential and alternative method to deposit the chemical vapor deposition (CVD) diamond film with high-concentration N, which be favorable for the widespread application of diamond in the electric field.