Abstract
The narrow band gap and significant separation of photogenerated carriers are essential aspects in practical photocatalytic applications. Nitrogen doping usually narrows the band gap of semiconductor oxides, and it enhances photocatalytic activity. Nitrogen-doped Nb(2)O(5) was prepared by a multiple hydrothermal method. The non-metal element N inside the nanostructure, working as the trapping sites for the holes, which were effectively incorporated into the crystal lattice of Nb(2)O(5) semiconductor oxide, remarkably shorten the band gap (3.1 eV) to enhance the visible light response, effectively reducing the photoinduced electron-hole pair recombination and prolonging carrier lifetime. The multilayer coating structure with a gradient concentration distribution and the type of nitrogen doped is favorable for the migration of photoexcited carriers in the bulk of catalysts. The unique multi-layer coating with the micro-concentration gradient of doped nitrogen provides a fast separation channel and jump steps for the separation of electron-hole pairs.