Superconductivity in transparent amorphous indium tin oxide films deposited by RF magnetron sputtering

射频磁控溅射沉积的透明非晶态氧化铟锡薄膜的超导性

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Abstract

Integrating superconductivity with high optical transparency is critical for advancing quantum technologies, yet remains fundamentally challenging due to photon damping at conventional superconductor interfaces. Here, we report the integrated circuit process compatible and scalable fabrication of transparent superconducting tin-doped indium oxide (ITO) thin films by RF magnetron sputtering without post-treatment. Combining Aslamazov-Larkin fluctuation theory and Ginzburg-Landau analysis, a superconducting transition temperature T(c) of 1.43 K and the zero-temperature coherence length of 18.14 nm are determined. The two-dimensional nature of superconductivity is corroborated by a Berezinskii-Kosterlitz-Thouless transition near 0.8 K. These ITO films exhibit high transmittance across visible and near-infrared wavelengths, meeting the demands of quantum photonic applications. Comparative magneto-transport studies reveal that disorder suppresses electron-phonon coupling, thereby reducing T(c) or even quenching superconductivity, while superconductivity itself suppresses weak localization (WL) signatures. Based on these observations, we propose a four-stage model describing the evolution from a normal metallic state to a phase-coherent superconducting phase through an interactive regime and a pre-pairing fluctuation regime. This work provides a simple and easy growth method for transparent ITO superconducting films and paves the way of exploring transparent superconductor for promising quantum material platforms.

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