Abstract
The electron transport layer (ETL) plays a crucial role in fabricating efficient and stable planar perovskite solar cells (PSCs). Among the various alternatives to TiO(2) for electron transport layers (ETLs), tin oxide (SnO(2)) has emerged as a highly promising candidate due to its outstanding potential. However, improvements in SnO(2) materials remain necessary due to inherent limitations, such as low conductivity, high energy barrier, and interfacial defects. In this study, Mg(2+) ions were introduced into SnO(2) to substitute Sn sites, leading to an increase in the open-circuit voltage (V(oc)) of PSCs, and consequently enhancing overall device efficiency. With a Mg doping concentration of 3.0%, the V(oc) and power conversion efficiency (PCE) of the solar cell reached 1.540 V and 7.17%, respectively. The incorporation of Mg(2+) ions into SnO(2) presents an effective method to improve the performance of SnO(2) ETL in PSCs while utilizing more environmentally friendly solvents.