Dynamically Reconfigurable XNOR/IMP Logic Based on Dual-Mechanism Operation in an Electrically Tunable Two-Dimensional Heterojunction

基于电可调二维异质结中双机制操作的动态可重构XNOR/IMP逻辑

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Abstract

Reconfigurable logic is crucial for future adaptive computing, but is challenging to realize with conventional complementary metal-oxide-semiconductor technology due to the limited field-effect characteristics of the fundamental silicon devices. Two-dimensional materials offer a promising platform, yet enhancing their functional versatility requires novel operational mechanisms. Here, we demonstrate a single WSe(2)/h-BN/graphene heterojunction capable of dynamically switching between distinct logic functions-XNOR and IMP (implication gate or "IF-THEN" gate)-simply by modulating the drain-source voltage. At a low bias of 0.3 V, the carrier distribution is governed by capacitive coupling, realizing an XNOR gate. Increasing the bias to 3 V activates Fowler-Nordheim tunneling between the graphene floating gate and the drain, enabling IMP logic operation. The interplay and voltage-induced transition between these two physical mechanisms underpin the device's multifunctional capability. This work introduces a novel operational strategy for two-dimensional material-based reconfigurable logic, providing a pathway toward compact, adaptive hardware for post-CMOS computing.

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