Abstract
This study aims to enhance optoelectronic properties of all-inorganic perovskite photodetectors (PDs) by incorporating a bilayer electron transport layer (ETL). The bilayer ETL composed of SnO(2) and ZnO effectively optimizes energy level alignment at the interface, facilitating efficient electron extraction from the CsPbI(2)Br perovskite layer while suppressing shunt pathways. Additionally, it enhances interfacial properties by mitigating defects and minimizing dark current leakage, thereby improving overall device performance. As a result, the bilayer ETL-based PDs exhibit broadband photoresponsivity in 300 to 700 nm with a responsivity of 0.45 A W(-1) and a specific detectivity of 9 × 10(13) Jones, outperforming the single-ETL devices. Additionally, they demonstrate stable cyclic photoresponsivity with fast response times (14 μs for turn-on and 32 μs for turn-off). The bilayer ETL also improves long-term reliability and thermal stability, highlighting its potential for high performance, reliability, and practical applications of all-inorganic perovskite PDs.