Abstract
Zinc indihuhium sulfide (ZIS), among various semiconductor materials, shows considerable potential due to its simplicity, low cost, and environmental compatibility. However, the influence of precursor anions on ZIS properties remains unclear. In this study, we synthesized ZIS via a hydrothermal method using four different anionic precursors (ZnCl2/InCl3, Zn(NO3)2/In(NO3)3, Zn(CH3CO2)2/In(CH3CO2)3, and Zn(CH3CO2)2/In2(SO4)3), resulting in distinct morphologies and crystal structures. Our findings reveal that ZIS produced from Zn(CH3CO2)2/In2(SO4)3 (ZIS-AceSO4) exhibited the highest photocatalytic CO2 reduction efficiency, achieving a CO production yield of 134 μmol g-1h-1. This enhanced performance is attributed to the formation of more zinc and indium vacancy defects, as confirmed by EDS analysis. Additionally, we determined the energy levels of the valence band maximum (VBM) and the conduction band minimum (CBM) via UPS and absorption spectra, providing insights into the band alignment essential for photocatalytic processes. These findings not only deepen our understanding of the anionic precursor's impact on ZIS properties but also offer new avenues for optimizing photocatalytic CO2 reduction, marking a significant advancement over previous studies.