Abstract
X-ray detectors have numerous applications in medical imaging, industrial inspection, and crystal structure analysis. Gallium oxide (Ga(2)O(3)) shows potential as a material for high-performance X-ray detectors due to its wide bandgap, relatively high mass attenuation coefficient, and resistance to radiation damage. In this study, we present Sn-doped Ga(2)O(3) microwire detectors for solar-blind and X-ray detection. The developed detectors exhibit a switching ratio of 1.66 × 10(2) under X-ray irradiation and can operate stably from room temperature to 623 K, which is one of the highest reported operating temperatures for Ga(2)O(3) X-ray detectors to date. These findings offer a promising new direction for the design of Ga(2)O(3)-based X-ray detectors.