Abstract
Ultrathin oxide semiconductors are promising channel materials for next-generation thin-film transistors (TFTs), but their performance is severely limited by bulk and interface defects as the channel thickness approaches a few nanometers. In this study, we show that high-pressure hydrogen annealing (HPHA) effectively mitigates these limitations in 3.6 nm thick ZnO TFTs. HPHA-treated devices exhibit a nearly four-fold increase in on-current, a steeper subthreshold swing, and a negative shift in threshold voltage compared to reference groups. X-ray photoelectron spectroscopy reveals a marked reduction in oxygen vacancies and hydroxyl groups, while capacitance-voltage measurements confirm more than a three-fold decrease in interface trap density. Low-frequency noise analysis further demonstrates noise suppression and a transition in the dominant noise mechanism from carrier number fluctuation to mobility fluctuation. These results establish HPHA as a robust strategy for defect passivation in ultrathin oxide semiconductor channels and provide critical insights for their integration into future low-power, high-density electronic systems.