Abstract
Boron phosphide (BP), an emerging III-V semiconductor, has garnered significant interest because of its exceptional structural stability, wide bandgap, high thermal conductivity, and tunable electronic properties. This review provides a comprehensive analysis of BP, commencing with its distinctive structural characteristics and proceeding with a detailed examination of its exceptional physicochemical properties. Recent progress in BP synthesis is critically examined, with a focus on key fabrication strategies such as chemical vapor deposition, high-pressure co-crystal melting, and molten salt methods. These approaches have enabled the controlled growth of high-quality BP nanostructures, including bulk crystals, nanoparticles, nanowires, and thin films. Furthermore, the review highlights the broad application spectrum of BP, spanning photodetectors, sensors, thermal management, energy conversion, and storage. Despite these advances, precise control over the growth, morphology, and phase purity of BP's low-dimensional structures remains a critical challenge. Addressing these limitations requires innovative strategies in defect engineering, heterostructure design, and scalable manufacturing techniques. This review concludes by outlining future research directions that are essential for unlocking BP's potential in next-generation electronics, sustainable energy technologies, and multifunctional materials.