Abstract
This paper presents an advanced dielectric engineering approach utilizing a composition-dependent hafnium zirconium oxide (Hf(1-x)Zr(x)O(2)) superlattice (SL) structure for Si nanosheet gate-all-around field-effect transistors (Si NSGAAFETs). The dielectric (DE) properties of solid solution (SS) and SL Hf(1-x)Zr(x)O(2) capacitors were systematically characterized through capacitance-voltage (C-V) and polarization-voltage (P-V) measurements under varying annealing conditions. A high dielectric constant (k-value) of 59 was achieved in SL-Hf(0.3)Zr(0.7)O(2), leading to a substantial reduction in equivalent oxide thickness (EOT). Furthermore, the SL-Hf(0.3)Zr(0.7)O(2) dielectric was integrated into Si NSGAAFETs, with the interfacial layer (IL) further optimized via NH(3) plasma treatment. The resulting devices exhibited superior electrical performance, including an enhanced ON-OFF current ratio (I(ON)/I(OFF)) reaching 10(7), an increased drive current, and significantly reduced gate leakage. These results highlight the potential of SL-Hf(0.3)Zr(0.7)O(2) as a high-k dielectric solution for overcoming EOT scaling challenges in advanced CMOS technology and enabling further innovation in next-generation logic applications.