Abstract
Third-generation wide-bandgap (WBG) semiconductor power electronics exhibit excellent workability, but high-temperature packaging technology limits their applications. TLP, TLPS, and nanoparticle sintering have the potential to achieve a high-temperature-resistant joint at a lower bonding temperature. However, a long bonding time, voids in the joint, powder oxidation, and organic solvent residues impede their application. A novel interlayer and other approaches have been proposed, such as preformed Sn-coated Cu foam (CF@Sn), a Cu-Sn nanocomposite interlayer, self-reducible Cu nanoparticle paste, bimodal-sized Cu nanoparticle pastes, organic-free nanoparticle films, and high-thermal-conductivity and low-CTE composite paste. Their preparation, bonding processes, and joint properties are compared in this paper.