Abstract
We evaluated for the morphology and growth behavior of IMC grain according to number of reflows of solder cap pure Sn microbumps. In the structure of Ni barrier/Cu layer between Cu pillar and pure Sn, solder cap pure Sn on the top layer was analyzed for the behavior change of IMC grain according to the number of reflows. The height and diameter of the bumps on the wafer were designed to be 40 μm and 30 μm, respectively. The vertical structure of the microbump consisted of Ti/Cu (1000 Å/2000 Å), Cu pillar (20 µm), Ni barrier (3 µm), and Cu (1 µm). The overall height of the bump is about 40 μm. Additionally, the height of the solder cap pure Sn as the last layer is 20 μm. The diameter of the bump is 30 μm. It was formed using plating. After plating to solder cap Sn, it was finally formed for the microbump using reflow. Samples were prepared according to the number of reflows (1, 3, 5, 7, and 9). To observe the grain morphology of the IMC, the pure Sn on the upper layer (solder cap) was removed using SupraBond RO-22 etchant. In the removed state, the morphology of the IMC grain was evaluated to the inside surface of bump using SEM and a 3D scope. The average number of IMC grains decreased linearly during reflow cycles 1 to 5 and then gradually decreased during reflow cycles 7 to 10. The average surface area of IMC grains was 18.243 μm when reflow was performed once. The average surface area of IMC grains increased proportionally for reflow cycles 1 to 10. Based on the experimental results, when the count of reflow was performed more than 10 times, it was confirmed that the solder cap pure Sn was reduced by more than 50% due to the increase in the area of IMC grain.