Abstract
Transition metal dichalcogenides, notably MoS(2), have garnered substantial attention owing to their excellent optical and electrical properties. While various methods have been employed to grow MoS(2), resulting in nanostructures with diverse dimensionalities, controlling the lattice orientation and synthesizing aligned nanostructures beyond 2D remain a formidable challenge. In this study, we report the epitaxial growth of aligned MoS(2) nanofin-nanoribbon hybrids, each consisting of a horizontal nanoribbon with a vertical lamellar structure ("fin") in its center. Structural analysis reveals epitaxial relations that induce the growth into three isomorphic orientations following the 3-fold symmetry of the C-plane sapphire substrate. The nanofin-nanoribbon hybrid was integrated into a fin-channel photodetector with response times on the scale of tens of μs and high photocurrent. Furthermore, the nanofin-nanoribbon hybrids are incorporated into n-type "fin-FET" transistors, showing on-off ratios on the order of ∼10(3) at room temperature. The performance of these devices is discussed in terms of the efficient fabrication process, devoid of postgrowth steps, and the unique dimensionality of the device, which realizes a high optical path in the fin-shaped channel. This work demonstrates the integration of MoS(2) into efficient fin-channel electronic and optoelectronic devices, laying the foundation for large-scale integration of TMDs into devices with nonstandard channel configurations.