Monolayer TiAlTe(3): A Perfect Room-Temperature Valleytronic Semiconductor

单层TiAlTe(3):一种完美的室温谷电子半导体

阅读:2

Abstract

Investigating valley-related physics in rare intrinsic ferromagnetic materials with high-temperature stability and viable synthesis methods is of vital importance for advancing fundamental physics and information technology. Through first-principles calculations, we forecast that monolayer TiAlTe(3) has superb structural stability, a ferromagnetic coupling mechanism deriving from direct-exchange and superexchange interactions, and a high magnetic transition temperature. We observed spontaneous valley polarization of 103 meV in the bottom conduction band when monolayer TiAlTe(3) is magnetized toward an out-of-plane orientation. Additionally, because of its powerful valley-contrasting Berry curvature, the anomalous valley Hall effect emerges under an in-plane electric field. The cooperation of ferromagnetic coupling, a high magnetic transition temperature, and spontaneous valley polarization makes monolayer TiAlTe(3) a promising room-temperature ferrovalley material for use in nanoscale spintronics and valleytronics.

特别声明

1、本页面内容包含部分的内容是基于公开信息的合理引用;引用内容仅为补充信息,不代表本站立场。

2、若认为本页面引用内容涉及侵权,请及时与本站联系,我们将第一时间处理。

3、其他媒体/个人如需使用本页面原创内容,需注明“来源:[生知库]”并获得授权;使用引用内容的,需自行联系原作者获得许可。

4、投稿及合作请联系:info@biocloudy.com。