Abstract
The atomic level polishing of a material surface affects the accuracy of devices and the application of materials. Silica slurries play an important role in chemical mechanical polishing (CMP) by polishing the material surface. In this study, an efficient and controllable Stöber approach was developed to synthesize uniform monodisperse silica spheres with different cationic surfactants. The obtained silica spheres exhibited a regular shape with a particle size of 50-150 nm and were distributed evenly and narrowly. The highest surface specific area of the silica spheres was approximately 1155.9 m(2)/g, which was conducive to the polish process. The monodisperse SiO(2) spheres were applied as abrasives in chemical mechanical polishing. The surface micrographs of silicon wafers during the CMP process were studied using atomic force microscopy (AFM). The results demonstrated that the surface roughness Ra values reduced from 1.07 nm to 0.979 nm and from 1.05 nm to 0.933 nm when using a CTAB-SiO(2) microsphere as an abrasive. These results demonstrate the advantages of monodisperse SiO(2) spheres as abrasive materials in chemical mechanical planarization processes.