Abstract
Driven by the demands of artificial intelligence, big data and the Internet of Things, non-volatile memory has become the cornerstone of modern computing. However, at present, most of the preparation processes are quite complex and have high requirements for the materials. Here, we discovered that hydrazine (N(2)H(4)) molecules can be efficiently intercalated into the MoTe(2), acting as stable charge-trapping centers. This intercalation not only induces a controllable reversible polar conversion but also causes a huge hysteretic window (>60 V) lasting over one hour in air. Leveraging this giant hysteresis, we fabricated a simplified memory device. The device demonstrates a large erase/program current ratio of ~10(4) and excellent retention characteristics. Our work pioneers the use of interlayer molecular intercalation for electronic modulation in 2D semiconductors, offering a new paradigm for developing memory devices with fabrication processes.