Abstract
N-polar GaN HEMTs feature a natural back-barrier and enable the formation of low-resistance Ohmic contacts, with the potential to suppress short-channel effects and current collapse effects at sub-100 nm gate lengths, rendering them particularly promising for high-frequency communication applications. In this study, N-polar GaN films were grown on C-face SiC substrates with a 4° misorientation angle via MOCVD. By employing a two-step growth process involving LT-GaN or LT-AlGaN, the surface roughness of N-polar GaN films was reduced to varying degrees, accompanied by an improvement in crystalline quality. The growth processes, including surface morphology at each growth stage, such as the AlN nucleation layer, LT-GaN, LT-AlGaN, and the initial 90 nm HT-GaN, were investigated. The results revealed that a high V/III ratio and low-temperature growth conditions for the low-temperature layers, along with the introduction of a minor amount of Al, influenced adatom migration behavior and facilitated the suppression of step bunching. Suppressing step bunching during the initial growth stages was demonstrated to be critical for improving the surface quality and crystalline quality of N-polar GaN films. An N-polar GaN HEMT epitaxial structure was successfully achieved using the optimized surface morphology with a dedicated Fe-doped buffer process.