Abstract
AlN-based bulk acoustic wave (BAW) filters have emerged as crucial components in 5G communication due to their high frequency, wide bandwidth, high power capacity, and compact size. This paper mainly reviews the basic principles and recent research advances of AlN-based BAW resonators, which are the backbone of BAW filters. We begin by summarizing the epitaxial growth of single-crystal, polycrystalline, and doped AlN films, with a focus on single-crystal AlN and ScAlN, which are currently the most popular. The discussion then extends to the structure and fabrication of BAW resonators, including the basic solidly mounted resonator (SMR) and the film bulk acoustic resonator (FBAR). The new Xtended Bulk Acoustic Wave (XBAW) technology is highlighted as an effective method to enhance filter bandwidth. Hybrid SAW/BAW resonators (HSBRs) combine the benefits of BAW and SAW resonators to significantly reduce temperature drift. The paper further explores the application of BAW resonators in ladder and lattice BAW filters, highlighting advancements in their design improvements. The frequency-reconfigurable BAW filter, which broadens the filter's application range, has garnered substantial attention from researchers. Additionally, optimization algorithms for designing AlN-based BAW filters are outlined to reduce design time and improve efficiency. This work aims to serve as a reference for future research on AlN-based BAW filters and to provide insight for similar device studies.