Enhanced Photoelectrochemical Performance of 2D Bi(2)O(3)/TiO(2) Heterostructure Film by Bi(2)S(3) Surface Modification and Broadband Photodetector Application

通过Bi₂S₃表面改性增强二维Bi₂O₃/TiO₂异质结构薄膜的光电化学性能及其在宽带光电探测器中的应用

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Abstract

Photoelectrochemical devices have garnered extensive research attention in the field of smart and multifunctional photoelectronics, owing to their lightweight nature, eco-friendliness, and cost-effective manufacturing processes. In this work, Bi(2)S(3)/Bi(2)O(3)/TiO(2) heterojunction film was successfully fabricated and functioned as the photoelectrode of photoelectrochemical devices. The designed Bi(2)S(3)/Bi(2)O(3)/TiO(2) photoelectrochemical photodetector possesses a broad light detection spectrum ranging from 400 to 900 nm and impressive self-powered characteristics. At 0 V bias, the device exhibits an on/off current ratio of approximately 1.3 × 10(6). It achieves a commendable detectivity of 5.7 × 10(13) Jones as subjected to a 0.8 V bias potential, outperforming both bare TiO(2) and Bi(2)O(3)/TiO(2) photoelectrochemical devices. Moreover, the Bi(2)S(3)/Bi(2)O(3)/TiO(2) photoelectrode film shows great promise in pollutant decomposition, achieving nearly 97.7% degradation efficiency within 60 min. The appropriate band energy alignment and the presence of an internal electric field at the interface of the Bi(2)S(3)/Bi(2)O(3)/TiO(2) film serve as a potent driving force for the separation and transport of photogenerated carriers. These findings suggest that the Bi(2)S(3)/Bi(2)O(3)/TiO(2) heterojunction film could be a viable candidate as a photoelectrode material for the development of high-performance photoelectrochemical optoelectronic devices.

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