Abstract
The edge effect refers to what occurs when an object undergoes elastic contact with the edge of a material. This is common in practical applications, but the understanding of this phenomenon is not yet mature enough, and understanding the microscopic characteristics of the material regarding this phenomenon is necessary. This article investigates the edge effects of single-crystal silicon at different indentation positions through molecular dynamics simulations. The results indicate that the edge effect of the indentation is influenced by the indentation position and depth. The closer the indentation head is to the edge of the workpiece, the more particles are extruded from the side of the workpiece and the wider the collapse range of the indentation surface. At the same time, the indentation position also affects the distribution of the von Mises stress and phase transition area. When the edge effect occurs, the von Mises stress and phase transition region tend to be concentrated near the workpiece edge. This study demonstrates the atomic-scale deformation mechanism of single-crystal silicon under varying indentation positions.