Ag Nanowires-Enhanced Sb(2)Se(3) Microwires/Se Microtube Heterojunction for High Performance Self-Powered Broadband Photodetectors

银纳米线增强的Sb(2)Se(3)微线/Se微管异质结用于高性能自供电宽带光电探测器

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Abstract

The implementation of photoelectric conversion in photoelectric integrated systems requires the design of photodetectors (PDs) with quick response times and low power consumption. In this work, the self-powered photodetector was prepared by antimony selenide (Sb(2)Se(3)) microwires (MW)/Se microtube (MT) heterojunction by coating Ag nanowires (NW). The incorporation of Ag-NW involves dual enhancement mechanisms. First, the surface plasmon resonance (SPR) effect amplifies the light absorption across UV-vis-NIR spectra, and the conductive networks facilitate the rapid carrier transport. Second, the type-II band alignment between Sb(2)Se(3) and Se synergistically separates photogenerated carriers, while the Ag-NW further suppress the recombination through built-in electric field modulation. The optimized device achieves remarkable responsivity of 122 mA W(-1) at 368 nm under zero bias, with a response/recovery time of 8/10 ms, outperforming most reported Sb(2)Se(3)-based detectors. The heterostructure provides an effective strategy for developing self-powered photodetectors with broadband spectral adaptability. The switching ratio, responsivity, and detectivity of the Sb(2)Se(3)-MW/Se-MT/Ag-NW device increased by 260%, 810%, and 849% at 368 nm over the Sb(2)Se(3)-MW/Se-MT device, respectively. These results show that the addition of Ag-NW effectively improves the photoelectric performance of the Sb(2)Se(3)-MW/Se-MT heterojunction, providing new possibilities for the application of self-powered optoelectronic devices.

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