Abstract
A solution to the problem of resonant tunneling current saturation is proposed. This problem does not allow, within the traditional compact models, a correct qualitative and quantitative analysis to be carried out of the volt-ampere characteristics of double-barrier heterostructures. The reason for this problem is the asymptotic behavior of the function describing the structure transparency, so a non-saturating compact model was proposed to solve the problem of current transfer analysis in the region of negative differential conductivity. Validation of the proposed model confirmed its adequacy without losing the ability to analyze current transfer processes. This makes the developed compact model effective for simulating the operation of a wide range of devices with a resonant tunneling diode as a nonlinear element, regardless of the position of the operating point.