Abstract
Modification of the composition by doping is an effective way to develop new substrate materials for 5G/6G communication systems. This paper aims to study the impact of AlF(3)-CaB(4)O(7) doping on dielectric properties at very high frequencies, sintering temperature, microstructure, and feasibility in LTCC/ULTCC (low/ultra-low temperature cofired ceramics) technology of four low dielectric permittivity materials based on CuB(2)O(4), Zn(2)SiO(4), LiBO(2), and Li(2)WO(4). Sintering behavior, microstructure, elemental and phase composition, and dielectric properties in the terahertz range were characterized using a heating microscope, SEM, EDS, XRD methods, and time domain spectroscopy. The developed ceramics exhibit excellent dielectric behavior at terahertz frequencies and are feasible in ULTCC or LTCC technology. These properties make them good candidates for substrates in 5G/6G communication systems.