Abstract
In this study, an innovative switching approach is explored to improve the reliability of 1 Selector-1 ReRAM (1S1R) devices, integrated into a 4K crossbar array (CBA). The key innovation is the use of DC sweeping for set operations and AC single-pulse resetting to minimize device stress and prevent breakdown. The selector, based on a GeSeTe ovonic threshold switching (OTS) element, demonstrated excellent endurance (>10(12) cycles), fast switching (<100 ns), and high device-to-device uniformity (<5% variability). The ReRAM, constructed with Pt/LiNbO(x)/W, exhibited robust bipolar resistive switching, multi-bit capability, and endurance exceeding 10(12) cycles. The integrated 1S1R CBA demonstrated reliable retention and low variability in operation, showing potential for high-performance, high-density memory applications.