Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and Integrated Circuits: A Review

The photoelectrochemical oxidation method was utilized to directly grow a gate oxide layer and simultaneously create gate-recessed regions for fabricating GaN-based depletion-mode metal-oxide-semiconductor high-electron mobility transistors (D-mode MOSHEMTs). The LiNbO(3) gate ferroelectric layer and stacked gate oxide layers of LiNbO(3)/HfO(2)/Al(2)O(3) were respectively deposited on the created gate-recessed regions using the photoelectrochemical etching method to fabricate the GaN-based enhancement mode MOSHEMTs (E-mode MOSHEMTs). GaN-based complementary integrated circuits were realized by monolithically integrating the D-mode MOSHEMTs and the E-mode MOSHEMTs. The performances of the inverter circuit manufactured using the integrated GaN-based complementary MOSHEMTs were measured and analyzed.