Abstract
Solution-processed metal oxide dielectrics often result in unstable thin-film transistor (TFT) performance, hindering the development of next-generation metal oxide electronics. In this study, we prepared fluorine (F)-doped zirconium oxide (ZrO(2)) dielectric layers using a chemical solution method to construct TFTs. The characterization by X-ray photoelectron spectroscopy (XPS) revealed that appropriate fluoride doping significantly reduces oxygen vacancies and the concentration of hydroxyl groups, thereby suppressing polarization processes. Subsequently, the electrical properties of Al/F:ZrO(2)/n(++)Si capacitors were evaluated, demonstrating that the optimized 10% F:ZrO(2) dielectric exhibits a low leakage current density and stable capacitance across a wide frequency range. Indium zinc oxide (IZO) TFTs incorporating 10% F:ZrO(2) dielectric layers were then fabricated. These devices displayed reliable electrical characteristics, including high mobility over a broad frequency range, reduced dual-sweep hysteresis, and excellent stability under positive-bias stress (PBS) after three months of aging. These findings indicate that the use of the fluorine-doped ZrO(2) dielectric is a versatile strategy for achieving high-performance metal oxide thin-film electronics.