Estimation of the ion-trap assisted electrical loads and resulting BBR shift

估算离子阱辅助电负载及其导致的BBR偏移

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Abstract

Capacitive, inductive and resistive loads of an ion-trap system, which can be modelled as LCR circuits, are important to know for building a high accuracy experiment. Accurate estimation of these loads is necessary for delivering the desired radio frequency (RF) signal to an ion trap via an RF resonator. Of particular relevance to the trapped ion optical atomic clock, determination of these loads lead to accurate evaluation of the Black-Body Radiation (BBR) shift resulting from the inaccurate machining of the ion-trap itself. We have identified different sources of these loads and estimated their values using analytical and finite element analysis methods, which are found to be well in agreement with the experimentally measured values. For our trap geometry, we obtained values of the effective inductive, capacitive and resistive loads as: 3.1 μH, 3.71 (1) μH, 3.68 (6) μH; 50.4 pF, 51.4 (7) pF, 40.7 (2) pF; and 1.373 Ω, 1.273 (3) Ω, 1.183 (9) Ω by using analytical, numerical and experimental methods, respectively. The BBR shift induced by the excess capacitive load arising due to machining inaccuracy in the RF carrying parts has been accurately estimated, which results to a fractional frequency shift of 6.6 × 10(-17) for an RF of 1 kV at 2π × 15 MHz and with ±10 μm machining inaccuracy. This needs to be incorporated into the total systematic uncertainty budget of a frequency standard as it is about one order of magnitude higher than the present precision of the trapped ion optical clocks.

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