Abstract
Extreme ultraviolet (EUV) lithography faces critical challenges in aberration control and patterning fidelity as technology nodes shrink below 3 nm. This work demonstrates how Source-Mask Optimization (SMO) simultaneously addresses both illumination and mask design to enhance pattern transfer accuracy and mitigate aberrations. Through a comprehensive optimization framework incorporating key process metrics, including critical dimension (CD), exposure latitude (EL), and mask error factor (MEF), we achieve significant improvements in imaging quality and process window for 40 nm minimum pitch patterns, representative of 2 nm node back-end-of-line (BEOL) requirements. Our analysis reveals that intelligent SMO implementation not only enables robust patterning solutions but also compensates for inherent EUV aberrations by balancing source characteristics with mask modifications. On average, our results show a 4.02% reduction in CD uniformity variation, concurrent with a 1.48% improvement in exposure latitude and a 5.45% reduction in MEF. The proposed methodology provides actionable insights for aberration-aware SMO strategies, offering a pathway to maintain lithographic performance as feature sizes continue to scale. These results underscore SMO's indispensable role in advancing EUV lithography capabilities for next-generation semiconductor manufacturing.