Ultralow Temperature Sintering of High-Performance Sm-Doped Pb(Zr,Ti)O(3)-Based Piezoelectric Ceramics

高性能Sm掺杂Pb(Zr,Ti)O(3)基压电陶瓷的超低温烧结

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Abstract

Piezoelectric materials (PZTs) enjoy extensive applications in the field of electromechanical sensors due to their sensitive response to external electric fields. The limited piezoelectric response for single-layer piezoceramic pellets drives the use of multilayered technology to increase the electric displacement of a single piezo device. As is well known, Ag is commonly used as a metal for electrodes in devices based on traditional PZTs, which always densify at a high temperature above 1100 °C, resulting in Ag migration. Here, a high-performance samarium-ion-doped Sm(0.01)Pb(0.99)(Zr(0.54)Ti(0.46))O(3) ceramic was selected as parent materials to develop a new Ag-cofired ceramic matrix with a sintering temperature of 920 °C by glass flux. The ceramic composition with 2.0 wt% glass addition exhibits the excellent performance of piezoelectric d(33)~492 pC/N, planar electromechanical coupling coefficient k(p)~50.1%, mechanical quality factor Q(m)~68.71, and Curie temperature T(c)~356 °C, respectively. The cyclic stability of d(33) was measured below 6.6% at 30 kV/cm, which indicates that the piezoceramic has good temperature stability and fatigue resistance. Therefore, this study provides a novel high-performance piezoelectric system to meet the cofired requirement for multilayered piezoelectric devices.

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