Abstract
The reliability of through-glass via (TGV) interconnects is critical for advanced semiconductor packaging. This work investigates microstructural and mechanical evolution in electroplated TGV-Cu subjected to long-term aging at 250 °C. TGV samples were fabricated via laser-induced etching and double-sided copper electroplating, then aged for up to 1008 h. Nanoindentation revealed region-dependent reductions in hardness (from 2.0-2.5 GPa to below 0.5 GPa) and modulus (from 110-130 GPa to 40-90 GPa), with surface-near regions most affected. The glass substrate maintained stable mechanical properties until microcracks formed after 1008 h. EBSD quantification showed grain-size enlargement from 0.46 µm to 1.86 µm and a concurrent decrease in dislocation density. Molecular dynamics simulations of 3, 4, 5 nm grains corroborated the inverse relationship between grain size and micro-mechanical properties. A hybrid Potts-phase field model further linked grain coarsening to stress relaxation and elastic-energy minimization, revealing that as grains grow, the overall von Mises stress in the structure decreases; high-modulus grains retain relatively higher local stresses, while low-modulus, low-stress grains exhibit faster growth rates. Electrical I-V measurements confirmed stable ohmic behavior, despite a drop in insulation resistance. These integrated experimental and computational insights provide theoretical guidance for optimizing TGV interposer design and ensuring long-term operational reliability in heterogeneous integration technologies.