Evaluating the Output Performance of the Semiconductor Bridge Through Principal Component Analysis

通过主成分分析法评估半导体桥的输出性能

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Abstract

The complex burst characteristic parameters of SCB were subjected to dimensionality reduction using principal component analysis (PCA), enabling accurate evaluation of the output performance of SCB. The accuracy and reliability of the PCA method were also validated. A 100 μF tantalum capacitor was utilized to excite the SCB, while a digital oscilloscope recorded the characteristic parameters of the SCB explosion. The experimental results demonstrate that the critical burst time of SCB decreases with the rising voltage, and the critical burst energy decreases first and then increases with the rising voltage. The total burst time and total burst energy of SCB all decrease first and then increase with the rise of voltage. The PCA results indicate that as the voltage increases, the score of SCB output capacity initially decreases and then increases, reaching its lowest point at 17 V. The SCB was utilized to ignite lead styphnate (LTNR) under varying circuit conditions; the characteristic parameters obtained were analyzed using PCA to derive comprehensive scores. The same dataset was then input into the PCA model for pure SCB to calculate corresponding comprehensive scores. The consistency between the two sets of scores validated the accuracy and reliability of PCA in assessing SCB output capability.

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