Abstract
Multiferroic heterostructures combining ferromagnetic and ferroelectric layers are promising for applications in novel spintronic devices, such as memories with electrical writing and magnetic reading, assuming their magnetoelectric coupling (MEC) is strong enough. For conventional magnetic metal/ferroelectric heterostructures, however, the change of interfacial magnetic moment upon reversal of the electric polarization is often very weak. Here, by using first principles calculations, we demonstrate a new pathway towards a strong MEC at the interface between the semi-hydrogenated graphene (also called graphone) and ferroelectric PbTiO(3). By reversing the polarization of PbTiO(3), the magnetization of graphone can be electrically switched on and off through the change of carbon-oxygen bonding at the interface. Furthermore, a ferroelectric polarization can be preserved down to ultrathin PbTiO(3) layers less than one nanometer due to an enhancement of the polarization at the interface. The predicted strong magnetoelectric effect in the ultimately thin graphone/ferroelectric layers opens a new opportunity for the electric control of magnetism in high-density devices.