Microwave Kinetic Inductance Detector Made of Molecular Beam Epitaxy (MBE)-Grown MgB2 Film

采用分子束外延(MBE)生长MgB2薄膜制成的微波动能电感探测器

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Abstract

We present a MgB(2)-based Microwave Kinetic Inductance Detector (MKID) featuring a quality factor Q(i) ~ 10(5) and noise equivalent power NEP ~ 10(-14) W/Hz at 2 K. In comparison to YBCO-based MKIDs, the MgB(2) detector shows greater sensitivity to both temperature and magnetic field, a result of its two-gap nature and relatively low critical Hc2 field. Our data indicate that MgB(2) is more advantageous for MKID applications at temperatures lower than 3 K.

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