Abstract
This work provides a comprehensive investigation by using simulations and performance analysis of a high performance and narrowband Ag(3)CuS(2) photodetector (PD) that operates in the near-infrared (NIR) region and is built using WS(2) and BaSi(2) semiconductors. Across its operational wavelength range, a comprehensive assessment of the device's electrical and optical properties such as photocurrent, open-circuit voltage, quantum efficiency, responsivity and detectivity is methodically carried out. Furthermore, a thorough investigation has been conducted into the impact of many parameters, including width, carrier density and defects of various layers. Also, the intricate interactions between WS(2)/Ag(3)CuS(2) and Ag(3)CuS(2)/BaSi(2) interface properties of the photodetector are explored. The Ag(3)CuS(2)-based PD remarkably produces the best outcomes with an open-circuit voltage of 0.74 V, current of 43.79 mA/cm(2), responsivity of 0.79 AW(-1) and detectivity of 4.73 × 10(14) Jones and over 90 % QE in the NIR range for the Ag(3)CuS(2) PD. The results showcase this jalpaite material as a promising one in the field of PD.