A Theoretical Study of the Electron-Surface Optical Phonon Interaction in Monolayer Transition Metal Dichalcogenides Deposited on SiC and hexagonal BN Dielectric Substrates in the Vicinity of the Points K(+)(K(-)) of the Brillouin Zone

对沉积在SiC和六方氮化硼介电衬底上的单层过渡金属二硫化物在布里渊区K(+)(K(-))点附近的电子-表面光学声子相互作用进行了理论研究

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Abstract

We theoretically investigated the electron-surface optical phonon interaction across the long-range Fröhlich coupling in monolayer transition metal dichalcogenides, such as WS(2), WSe(2), MoS(2), and MoSe(2) monolayers, on SiC and hexagonal BN dielectric substrates. We employed the effective Hamiltonian in the K+(K-) valley of the hexagonal Brillouin zone to assess the electronic energy shifts induced by the interaction between electronic states and surface polar optical phonons. Our results indicate that the interaction between electrons and surface optical phonons depends upon the polar nature of the substrate. We have also calculated the polaronic oscillator strength, as well as the polaronic scattering rate of the lower polaron state in monolayer WS(2), WSe(2), MoS(2), and MoSe(2) on SiC and hexagonal BN dielectric substrates. As a result, we have theoretically proved the following: firstly, the enhancement of the polaronic scattering rate with temperature, and secondly, the notable influence of the careful selection of surrounding dielectrics on both the polaronic oscillator strength and the polaronic scattering rate. Thus, optimal dielectrics would be those exhibiting both elevated optical phonon energy and a high static dielectric constant.

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