Abstract
ZrTe(5) is an important semiconductor thermoelectric material and a candidate topological insulator. Here we report the observation of Shubnikov-de Hass (SdH) oscillations accompanied by quantized Hall resistance in bulk ZrTe(5) crystal, with a mobility of 41,000 cm(2)V(-1)s(-1). We have found that the quantum oscillations does not originate from the surface states, but from the bulk states. Each single layer ZrTe(5) acted like an independent 2D electron system in the quantum Hall regime having the same carrier density and mobilities, while the bulk of the sample exhibits a multilayered quantum Hall effect.